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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION HSM101 THRU HSM106 SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Fast switching Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram MELF MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .205 (5.2) .190 (4.8) SOLDERABLE ENDS .028 (.60) .018 (.46) .106 (2.7) .095 (2.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 50 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 15 -65 to + 175 HSM101 HSM102 HSM103 HSM104 HSM105 HSM106 50 35 50 100 70 100 200 140 200 1.0 30 12 300 210 300 400 280 400 600 420 600 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25oC Maximum Full Load Reverse Current Average, o Full Cycle .375" (9.5mm) lead length at TL = 55 C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. SYMBOL VF IR trr 50 HSM101 HSM102 HSM103 HSM104 HSM105 HSM106 1.0 5.0 100 75 1.3 1.70 UNITS Volts uAmps uAmps nSec 2001-4 RATING AND CHARACTERISTIC CURVES ( HSM101 THRU HSM106 ) AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (V) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load (+) 25 Vdc (approx) (V) D.U.T 0 PULSE GENERATOR (NOTE 2) -0.25A 1.0 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A 1 NOTES: Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms. 1cm SET TIME BASE FOR 10/20 ns/cm 0 0 25 50 75 100125150175 AMBIENT TEMPERATURE ( ) INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 100 10 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 SM 04 M1 HS 10 T J = 150 1.0 M1 ~H SM 3 ~H 01 T J = 100 1.0 .1 T J = 25 HS .1 .01 Pulse Width = 300uS 1% Duty Cycle .01 PEAK FORWARD SURGE CURRENT, (A) .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) JUNCTION CAPACITANCE, (pF) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 70 60 50 40 30 20 10 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine-Wave (JEDEC Method) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) HSM 101 ~HS M1 HS T J = 25 M 10 6 10 5 M10 5 T J = 25 HS 06 RECTRON |
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